Investigation of Frequency Dependence on the Noise Response of a Novel Transparent Gate Recessed Channel Mosfet
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چکیده
The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedance for high performance applications where noise immunity is a key factor.
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تاریخ انتشار 2014